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SSM3K12T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K12T
DC-DC Converter High Speed Switching Applications
* * * Small Package Low ON-resistance High speed Unit: mm
: Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) : ton = 21 ns : toff = 16 ns
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 20 3.0 6.0 0.7 1.25 150 -55~150 Unit V V A W C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC JEITA

Note:
TOSHIBA 2-3S1A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 10 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
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SSM3K12T
Marking
3
Equivalent Circuit
3
KDJ
1
2
1
2
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth |Yfs| Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 1.5 A ID = 1.5 A, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 1.5 A, VGS = 4.5 V ID = 1.5 A, VGS = 4.0 V Total gate charge Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Qg Ciss Crss Coss tr ton tf toff VDD = 15 V, ID = 1.5 A VGS = 0~4 V, RG = 10 (Note 3) (Note 3) (Note 3) (Note 3) Min 30 1.1 1.8 Typ. 3.2 78 117 135 2.6 120 20 68 13 21 3.6 16 Max 1 1 1.8 95 145 175 ns nC pF pF pF m Unit A V A V S
VDD = 24 V, ID = 3 A, VGS = 4 V VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz
Note 3 : Pulse test
Switching Time Test Circuit
(a) Test circuit
10 s 4V 0 ID IN RG RL OUT VDD = 15 V RG = 10 D.U. < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C
(b) VIN
4V 10%
90%
0
(c) VOUT
VDD
10% 90% tr ton toff tf
VDD
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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SSM3K12T
ID - VDS
6 10 10000 4.5 4 Common Source Ta = 25C 1000
ID - VGS
5
(mA)
(A)
100C 100 Ta = -25C 25C
4
3.6
Drain current ID
3
VGS = 3.3 V
Drain current ID
10
2
3.0 2.8 2.6
1
1
0.1
Common Source VDS = 5 V 0.5 1 1.5 2 2.5 3 3.5 4 4.5
0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01 0
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) -ID
300 Common Source Ta = 25C 250 500 450 4 200
RDS (ON) - VGS
Common Source ID = 1.5 A 400 350 300 250 200 150 100 50 100C Ta = 25C -25C 5 10 15 20
Drain-Source on resistance RDS (ON) (m)
150
4.5
100 VGS = 10 V
50
0 0
Drain-Source on resistance RDS (ON) (m)
6
1
2
3
4
5
0 0
Drain current ID (A)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
250 Common Source ID = 1.5 A 200 4 150 4.5 100 VGS = 10 V 50 10 Common Source VDS = 5 V Ta = 25C
|Yfs| - ID
Forward transfer admittance |Yfs| (S)
125 150
Drain-Source on resistance RDS (ON) (m)
1
0.1
0 -25
0
25
50
75
100
00.1 0.01
0.1
1
10
Ambient temperature Ta (C)
Drain current ID (A)
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Vth - Ta
2.0 1.8 3 Common Source VGS = 0 Ta = 25C
IDR - VDS
Drain reverse current IDR (A)
Vth (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 Common Source VDS = 5 V ID = 0.1 mA 100 125 150
2.5
2
Gate threshold voltage
IDR
1.5
1
0.5
0 0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-1
Ambient temperature Ta (C)
Drain-Source voltage
VDS
(V)
Dynamic Input Characteristic
10 9 1000
t - ID
Common Source VDD = 15 V VGS = 04 V Ta = 25C RG = 10 100 tf toff
Gate-Source Voltage VGS (V)
8
6 5 4 3 2 1 0 0 1 2 3 4 Common Source ID = 3 A Ta = 25C 5 6 7 VDD = 24 V
Switching time t (ns)
7
12 V
ton 10 tr
Total Gate charge Qg (nC)
1 0.01
0.1
1
10
Drain current ID (A)
C - VDS
400 1.6 350 Common Source VGS = 0 f = 1 MHz Ta = 25C 1.4 t = 10 s 1.2 1.0 0.8 0.6 0.4 0.2 0 0
PD - Ta
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
(pF)
300 250 200 150 100
Drain power dissipation PD (W)
Capacitance C
DC
Ciss Coss
50 0 0
Crss 5 10 15 20 25 30
50
100
150
200
Drain-Source voltage
VDS (V)
Ambient temperature Ta (C)
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SSM3K12T
Safe operating area
10 ID max (pulsed) 1 ms* ID max (continuous) 10 ms*
Drain current ID (A)
1 DC operation Ta = 25C
10 s*
0.1
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1
VDSS max 10 100
0.01 0.1
Drain-Source voltage
VDS (V)
rth - tw
1000
Transient thermal impedance rth (C /W)
100
10
1
Single pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
0.1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width
tw (s)
5
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SSM3K12T
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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